ELECTRICAL CHARACTERISTICS (T
C
= 25
°C)
PART NUMBER NE650103M
PACKAGE OUTLINE 3M
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
P1dB
Power Out at 1dB Gain Compression dBm 39.0 40.0
GL
Linear Gain (at Pin ≤
23 dBm) dB 10.0 11.0
ηADD
Power Added Efficiency % 45
IDSS
Saturated Drain Current A 2.0 5.0 7.0 VDS
= 2.5 V; V
GS
= 0 V
VP
Pinch-Off Voltage V -4.0 -2.5 -1.0 VDS
= 2.5 V; I
DS
= 23 mA
RTH
Thermal Resistance
°C/W 4.0 4.5 Channel to Case
NEC'S
10 W L & S-BAND
NE650103M
POWER GaAs MESFET
FEATURES
? LOW COST PLASTIC PACKAGE
? USABLE TO 2.7 GHz:
PCS, W-CDMA, WLL, Satellite Uplink, BWA
? HIGH OUTPUT POWER:
40 dBm TYP
? HIGH POWER ADDED EFFICIENCY:
45 % TYP at 2.3 GHz
? LOW THERMAL RESISTANCE:
4.0°
C/W
? LEAD-FREE
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 3M
Functional
Characteristics
Electrical DC
Characteristics
f = 2.3 GHz, VDS
= 10.0 V
Rg = 100 ?
IDSQ
1.5 A (RF OFF)
California Eastern Laboratories
GATE
DRAIN
SOURCE
20.32 ± 0.15
8.54 ± 0.2
0.15 ± 0.05
2.04 ± 0.3
4.2 ± 0.4
13.8 ± 0.35
5.84 ± 0.2
1.8 ± 0.3
2-φ
3.3 ± 0.3
14.27 ± 0.15
3.5 ± 0.2
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